FQD3N40TF
MOSFET N-CH 400V 2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD3N40TF is a QFET® series N-Channel MOSFET designed for demanding applications. This surface mount device, packaged in a TO-252AA (DPAK), offers a 400 V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 2 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.4 Ohms at 1 A and 10 V gate-source voltage, it ensures efficient power handling. The device features a gate charge (Qg) of 7.5 nC (max) at 10 V and an input capacitance (Ciss) of 230 pF (max) at 25 V, facilitating robust switching performance. Power dissipation is rated at 2.5 W (Ta) and 30 W (Tc). The FQD3N40TF is suitable for power supply, motor control, and lighting applications, operating within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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