FQD30N06TF
MOSFET N-CH 60V 22.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD30N06TF is a QFET® series N-Channel power MOSFET designed for efficient switching applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 22.7 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 45 mOhm at 11.4 A and 10 V, the FQD30N06TF offers low conduction losses. The device supports a gate drive voltage of 10 V for optimal performance. Key parameters include a gate charge (Qg) of 25 nC and input capacitance (Ciss) of 945 pF at 25 V. The TO-252AA (DPAK) surface mount package ensures robust thermal management, with a maximum power dissipation of 44 W (Tc) and 2.5 W (Ta). This MOSFET is suitable for use in power supplies, motor control, and automotive applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 11.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 945 pF @ 25 V |
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