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FQD2P40TF

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FQD2P40TF

MOSFET P-CH 400V 1.56A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FQD2P40TF is a P-Channel MOSFET from the QFET® series, designed for demanding applications requiring high voltage and robust performance. This device offers a Drain-to-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) of 1.56 A at 25°C (Tc). Featuring a low Rds(on) of 6.5 Ohms maximum at 780 mA and 10 V, it facilitates efficient power switching. The TO-252AA (DPAK) surface mount package provides thermal management with a power dissipation of up to 38 W (Tc). Key electrical parameters include a gate charge (Qg) of 13 nC (max) and input capacitance (Ciss) of 350 pF (max). This component is suitable for use in power supply units, lighting controls, and motor drive circuits.

Additional Information

Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.56A (Tc)
Rds On (Max) @ Id, Vgs6.5Ohm @ 780mA, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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