FQD2N80TM
MOSFET N-CH 800V 1.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD2N80TM is a high-voltage N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 1.8A at 25°C (Tc), this component offers robust performance. Its TO-252AA (DPAK) package facilitates efficient surface mounting, crucial for compact designs. Key electrical characteristics include a maximum On-Resistance (Rds On) of 6.3 Ohms at 900mA and 10V gate drive, with a specified Gate Charge (Qg) of 15 nC at 10V. The MOSFET's maximum power dissipation is 2.5W (Ta) or 50W (Tc). This device is engineered for use in power factor correction, switch mode power supplies, and general purpose power switching applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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