FQD2N80TF
MOSFET N-CH 800V 1.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD2N80TF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 1.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 6.3 Ohms at 900mA and 10V, it offers efficient switching performance. The device supports a gate drive voltage of 10V for optimal Rds On characteristics and has a maximum gate-source voltage of ±30V. Key parameters include a typical gate charge (Qg) of 15 nC and input capacitance (Ciss) of 550 pF. Available in a TO-252AA (DPAK) surface mount package, the FQD2N80TF is suitable for power supply, lighting, and industrial motor control applications. It operates within an extended temperature range of -55°C to 150°C (TJ) and has a power dissipation of 2.5W (Ta) or 50W (Tc).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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