FQD2N60TM
MOSFET N-CH 600V 2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQD2N60TM is a QFET® series N-Channel Power MOSFET designed for demanding applications. This surface mount device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 4.7 Ohms at 1A and 10V gate-source voltage, it offers efficient switching performance. The device boasts a low gate charge (Qg) of 11 nC at 10V and an input capacitance (Ciss) of 350 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 45W (Tc). The TO-252AA (DPAK) package ensures robust thermal performance and ease of assembly for automated manufacturing processes. This component is utilized across various industries, including power supplies, lighting, and motor control, where high voltage and efficient power conversion are critical.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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