FQD2N60CTM-WS
MOSFET N-CH 600V 1.9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQD2N60CTM-WS is an N-Channel Power MOSFET from the QFET® series. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 4.7 Ohm at 950mA and 10V gate drive, it offers efficient switching characteristics. The MOSFET is housed in a TO-252AA (DPAK) surface-mount package, suitable for high-density board layouts. Key parameters include a maximum gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 235 pF at 25V. This component is designed for applications requiring robust performance in power supply units, lighting, and motor control systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 950mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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