FQD2N50TM
MOSFET N-CH 500V 1.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQD2N50TM is an N-Channel QFET® MOSFET designed for demanding applications. This TO-252AA packaged device offers a 500V drain-source voltage (Vdss) and a continuous drain current of 1.6A at 25°C (Tc). With a maximum Rds(on) of 5.3 Ohms at 800mA and 10V gate drive, it provides efficient switching characteristics. The MOSFET features a gate charge (Qg) of 8 nC (max) at 10V and an input capacitance (Ciss) of 230 pF (max) at 25V. Power dissipation is rated at 2.5W (Ta) and 30W (Tc). The FQD2N50TM is suitable for power supply, lighting, and motor control applications within its -55°C to 150°C operating temperature range.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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