FQD2N40TM
MOSFET N-CH 400V 1.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD2N40TM is an N-Channel QFET® series MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 1.4 A at 25°C. With a maximum on-resistance (Rds On) of 5.8 Ohms at 700 mA and 10 V, and a gate charge (Qg) of 5.5 nC at 10 V, it offers optimized performance for demanding power management tasks. The TO-252AA (DPAK) surface mount package facilitates integration into compact designs, with a maximum power dissipation of 2.5 W (Ta) and 25 W (Tc). This MOSFET is suitable for use in various industrial sectors including power supplies, motor control, and lighting. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |