FQD2N100TF
MOSFET N-CH 1000V 1.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQD2N100TF is an N-Channel Power MOSFET designed for high voltage applications. This component features a continuous drain current capability of 1.6A at 25°C (Tc) and a drain-source voltage (Vdss) of 1000V. With a maximum Rds On of 9 Ohm at 800mA and 10V, it offers efficient switching performance. The device utilizes Surface Mount technology, housed in a TO-252AA (DPAK) package, and is supplied on Tape & Reel (TR). Key parameters include a gate charge (Qg) of 15.5 nC (max) at 10V and input capacitance (Ciss) of 520 pF (max) at 25V. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). The operating temperature range is -55°C to 150°C (TJ), and it has a Vgs(th) of 5V at 250µA. This MOSFET is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
