FQD24N08TM
MOSFET N-CH 80V 19.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD24N08TM is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) rating of 19.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 60mOhm at 9.8A and 10V Vgs, it offers efficient power handling. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (TO-252AA) for surface mounting and is supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 25 nC at 10V and input capacitance (Ciss) of 750 pF at 25V. It operates across a temperature range of -55°C to 150°C (TJ). Applications for this component span industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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