FQD20N06TM
MOSFET N-CH 60V 16.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD20N06TM is an N-Channel Power MOSFET designed for demanding applications. This TO-252AA packaged device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 16.8A at 25°C (Tc). With a maximum Rds(on) of 63mOhm at 8.4A and 10V Vgs, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 15 nC at 10V and an input capacitance (Ciss) of 590 pF at 25V. The device supports a maximum gate-source voltage (Vgs) of ±25V and operates within an extended temperature range of -55°C to 150°C. Power dissipation is rated at 38W (Tc) and 2.5W (Ta). This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 25 V |
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