FQD20N06TF
MOSFET N-CH 60V 16.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQD20N06TF is an N-Channel Power MOSFET from the QFET® series, housed in a TO-252AA (DPAK) surface mount package. This device features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 16.8A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 63mOhm when driven at 10V with a drain current of 8.4A. Key electrical parameters include a gate charge (Qg) of 15 nC (max) at 10V and input capacitance (Ciss) of 590 pF (max) at 25V. The MOSFET offers a high continuous drain current capability with a maximum power dissipation of 38W at 25°C (Tc). Its operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply units, motor control, and general-purpose power switching applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
