FQD20N06LTM
MOSFET N-CH 60V 17.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD20N06LTM is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 17.2A at 25°C (Tc). With a low on-resistance (Rds On) of 60mOhm at 8.6A and 10V, it minimizes conduction losses. The FQD20N06LTM offers a maximum power dissipation of 38W (Tc) and 2.5W (Ta), with a gate charge (Qg) of 13 nC at 5V. It supports drive voltages from 5V to 10V and has a threshold voltage (Vgs(th)) of 2.5V at 250µA. Operating across a temperature range of -55°C to 150°C (TJ), this device utilizes surface mount technology in a TO-252AA, DPAK package. This component finds application in various industrial and consumer electronics sectors, including power supplies and motor control.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 8.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 25 V |
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