FQD20N06LTF
MOSFET N-CH 60V 17.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQD20N06LTF is an N-Channel Power MOSFET designed for demanding applications. This component offers a 60 V drain-source breakdown voltage and a continuous drain current capability of 17.2 A at 25°C (Tc). Featuring low on-resistance, its typical Rds(On) is 60 mOhm at 8.6 A and 10 Vgs. The device exhibits a gate charge (Qg) of 13 nC at 5 V and an input capacitance (Ciss) of 630 pF at 25 V. With a maximum power dissipation of 38 W (Tc) and 2.5 W (Ta), it is suitable for surface mount applications in a TO-252-3, DPAK package. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in industrial and automotive power management systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 8.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 25 V |
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