FQD20N06LETM
MOSFET N-CH 60V 17.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD20N06LETM is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 17.2A at 25°C (Tc). With a low on-resistance (Rds On) of 60mOhm maximum at 8.6A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 38W (Tc) and is packaged in a TO-252AA (DPAK) surface-mount package, suitable for efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 13 nC at 5V Vgs and input capacitance (Ciss) of 665 pF at 25V Vds. This component is utilized in various industries including automotive, industrial, and power supply applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 8.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 25 V |
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