FQD1P50TM
MOSFET P-CH 500V 1.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD1P50TM is a P-Channel QFET® MOSFET designed for high voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current capability of 1.2 A at 25°C. The Rds On is specified at a maximum of 10.5 Ohms at 600 mA, 10 V, with a gate drive voltage of 10 V. Key electrical characteristics include a maximum gate charge (Qg) of 14 nC and input capacitance (Ciss) of 350 pF at 25 V. The device is available in a TO-252AA (DPAK) surface mount package, delivering a maximum power dissipation of 38 W at 25°C (Tc). This component finds application in power supply, lighting, and industrial control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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