FQD1N60TF
MOSFET N-CH 600V 1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® series FQD1N60TF is an N-Channel MOSFET designed for high-voltage applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 1A at 25°C (Tc). With a maximum on-resistance (Rds On) of 11.5 Ohms at 500mA and 10V Vgs, it offers efficient switching characteristics. The device has a gate charge (Qg) of 6 nC maximum at 10V and a typical input capacitance (Ciss) of 150 pF at 25V. The FQD1N60TF is housed in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. It offers a maximum power dissipation of 30W at 25°C (Tc) and 2.5W at 25°C (Ta). This MOSFET is utilized in power supply units, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
