FQD1N60CTM
MOSFET N-CH 600V 1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD1N60CTM is an N-Channel Power MOSFET from the QFET® series. This device features a 600V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 1A at 25°C (Tc). With a maximum Rds On of 11.5 Ohms at 500mA and 10V Vgs, it offers efficient switching characteristics. The FQD1N60CTM is housed in a TO-252AA (DPAK) package, suitable for surface mounting. Its low gate charge (Qg) of 6.2 nC at 10V and input capacitance (Ciss) of 170 pF at 25V contribute to its performance. This MOSFET is designed for applications requiring high voltage handling and moderate current, finding use in power supplies, lighting, and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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