FQD1N60CTF
MOSFET N-CH 600V 1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD1N60CTF is a QFET® series N-Channel MOSFET designed for high-performance switching applications. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1A at 25°C (Tc). The Rds On is specified at a maximum of 11.5 Ohms at 500mA and 10V gate drive. With a gate charge (Qg) of 6.2 nC and input capacitance (Ciss) of 170 pF, it offers efficient switching characteristics. The device is housed in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. Maximum power dissipation is 2.5W (Ta) or 28W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET finds application in power supplies, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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