FQD19N10TM
MOSFET N-CH 100V 15.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQD19N10TM is an N-Channel Power MOSFET designed for demanding applications. Featuring a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 15.6A at 25°C, this device offers low on-resistance (Rds On) of 100mOhm maximum at 7.8A and 10V Vgs. Its TO-252AA (DPAK) surface mount package facilitates efficient thermal management, with a maximum power dissipation of 50W at 25°C (Tc). Key electrical characteristics include a gate charge (Qg) of 25 nC at 10V and input capacitance (Ciss) of 780 pF at 25V. The FQD19N10TM operates across a wide temperature range of -55°C to 150°C, making it suitable for industrial, automotive, and power supply applications. Supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
