FQD19N10TF
MOSFET N-CH 100V 15.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQD19N10TF from the QFET® series is a 100V N-Channel Power MOSFET in a TO-252AA (DPAK) surface mount package. This device offers a continuous drain current of 15.6A at 25°C (Tc) and a maximum Rds(on) of 100mOhm at 7.8A and 10V Vgs. Key electrical characteristics include a Vgs(th) of 4V at 250µA, a gate charge (Qg) of 25 nC at 10 V, and input capacitance (Ciss) of 780 pF at 25 V. The MOSFET supports a maximum gate-source voltage of ±25V. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). This component is suitable for applications in industrial power supplies, automotive systems, and power management. It is supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 25 V |
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