FQD18N20V2TF
MOSFET N-CH 200V 15A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD18N20V2TF is a QFET® series N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 15A at 25°C (Tc). With a maximum Rds(on) of 140mOhm at 7.5A and 10V, it offers efficient power handling. The device supports a Gate-Source Voltage (Vgs) range of ±30V and a Gate Charge (Qg) of 26 nC at 10V. Its input capacitance (Ciss) is rated at 1080 pF at 25V. The FQD18N20V2TF is packaged in a TO-252AA (DPAK) surface mount configuration, suitable for automated assembly. Power dissipation is 2.5W (Ta) and 83W (Tc). This MOSFET is utilized in power supply, industrial, and automotive sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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