FQD17P06TF
MOSFET P-CH 60V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD17P06TF is a P-Channel QFET® MOSFET designed for power management applications. This device features a drain-source breakdown voltage (Vdss) of 60 V and a continuous drain current (Id) of 12 A at 25°C (Tc). The Rds(on) is specified at a maximum of 135mOhm at 6A and 10V, with a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 27 nC (max) at 10V and input capacitance (Ciss) of 900 pF (max) at 25V. The FQD17P06TF is supplied in a TO-252AA (DPAK) surface mount package, facilitating efficient board integration. It offers a maximum power dissipation of 44W at 25°C (Tc) and 2.5W at 25°C (Ta). This component is commonly utilized in industries such as automotive, industrial, and consumer electronics for switching and power control functions. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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