FQD17N08LTM
MOSFET N-CH 80V 12.9A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD17N08LTM is an N-Channel QFET® MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 80 V and a continuous Drain Current (Id) of 12.9 A at 25°C. With a low On-Resistance (Rds On) of 100mOhm maximum at 10V Vgs and 6.45A Id, it minimizes conduction losses. The device offers a Gate Charge (Qg) of 11.5 nC maximum at 5V Vgs and an Input Capacitance (Ciss) of 520 pF maximum at 25V Vds. It supports gate drive voltages from 5V to 10V and has a maximum Gate-Source Voltage (Vgs) of ±20V. The FQD17N08LTM is housed in a TO-252-3, DPAK package, suitable for surface mounting. Power dissipation is rated at 40W (Tc) and 2.5W (Ta). This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 6.45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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