FQD13N10LTF
MOSFET N-CH 100V 10A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD13N10LTF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) rating of 10A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 180mOhm at 5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 12 nC maximum at 5V and an input capacitance (Ciss) of 520 pF maximum at 25V. With a power dissipation capability of 40W at 25°C (Tc), the FQD13N10LTF is housed in a TO-252AA (DPAK) surface mount package, suitable for high-density board designs. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in various industries including industrial automation, consumer electronics, and computing.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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