FQD13N06TF
MOSFET N-CH 60V 10A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD13N06TF is a QFET® series N-Channel Power MOSFET designed for efficient switching applications. This component offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 10A at 25°C (Tc). Featuring a low Rds(on) of 140mOhm maximum at 5A and 10V, it minimizes conduction losses. The device boasts a gate charge (Qg) of 7.5 nC maximum at 10V and input capacitance (Ciss) of 310 pF maximum at 25V. The FQD13N06TF is packaged in a TO-252AA (DPAK) surface mount configuration, suitable for automated assembly processes. Power dissipation is rated at 2.5W (Ta) and 28W (Tc). This MOSFET is utilized in various industrial sectors, including power supply units, motor control, and automotive electronics. It operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±25V.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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