FQD12P10TM-F085
MOSFET P-CH 100V 9.4A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FQD12P10TM-F085 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 100V. This surface mount component, packaged in a TO-252AA (DPAK) case, offers a continuous drain current (Id) of 9.4A at 25°C. The Rds On is specified at a maximum of 290mOhm at 4.7A, 10V. Key parameters include a gate charge (Qg) of 27 nC at 10V and input capacitance (Ciss) of 800 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). Designed for demanding applications, this device features an operating temperature range of -55°C to 150°C. It is qualified to AEC-Q101, indicating suitability for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
| Qualification | AEC-Q101 |
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