FQD12P10TF
MOSFET P-CH 100V 9.4A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQD12P10TF is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 9.4A at 25°C (Tc). The FQD12P10TF offers a low on-resistance (Rds On) of 290mOhm maximum at 4.7A and 10V Vgs, contributing to reduced conduction losses. With a maximum gate charge (Qg) of 27 nC at 10V Vgs, it facilitates faster switching speeds. The MOSFET is packaged in a TO-252AA (DPAK) surface mount package, ideal for automated assembly. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). This component is commonly utilized in industrial power supplies, automotive electronics, and power management systems. The operating temperature range is -55°C to 150°C (TJ). The input capacitance (Ciss) is a maximum of 800 pF at 25V Vds, and the gate-source breakdown voltage (Vgs(max)) is ±30V.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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