FQD12N20TM
MOSFET N-CH 200V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD12N20TM is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) capability of 9A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 280mOhm at 4.5A and 10V gate drive. With a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 910 pF at 25V, it offers excellent switching characteristics. The FQD12N20TM is housed in a TO-252AA (DPAK) surface-mount package, enabling robust board-level integration. Power dissipation is rated at 2.5W (Ta) and 55W (Tc). This component finds application in power supplies, motor control, and lighting solutions across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |
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