FQD12N20LTM-F085
MOSFET N-CH 200V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD12N20LTM-F085 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 9A at 25°C (Tc). With a low on-resistance (Rds On) of 280mOhm maximum at 4.5A and 10V, and a gate charge (Qg) of 21 nC maximum at 5V, it offers efficient switching performance. The device supports gate drive voltages from 5V to 10V and has a maximum continuous drain current of 9A at 25°C (Tc). Rated for AEC-Q101 qualification, this MOSFET is suitable for automotive applications. The power dissipation is 2.5W (Ta) and 55W (Tc). It is supplied in a TO-252AA (DPAK) package, designed for surface mounting and available on Tape & Reel. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
| Qualification | AEC-Q101 |
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