FQD11P06TF
MOSFET P-CH 60V 9.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD11P06TF is a P-Channel MOSFET from the QFET® series, designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 9.4A at 25°C. With a maximum on-resistance (Rds On) of 185mOhm at 4.7A and 10V gate drive, it offers efficient power switching. The device supports gate drive voltages up to 10V and has a maximum Vgs of ±30V. Key parameters include a gate charge (Qg) of 17 nC and input capacitance (Ciss) of 550 pF. The TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package allows for efficient thermal management, with a maximum power dissipation of 38W (Tc). This MOSFET is suited for use in power supply, motor control, and general switching applications. The FQD11P06TF is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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