FQD10N20TM
MOSFET N-CH 200V 7.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD10N20TM is an N-Channel Power MOSFET from the QFET® series, designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 7.6A at 25°C (Tc). With a maximum Rds(on) of 360mOhm at 3.8A and 10V Vgs, it offers low conduction losses. The device is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Key parameters include a gate charge (Qg) of 18 nC (max) and input capacitance (Ciss) of 670 pF (max). Its power dissipation capabilities are rated at 2.5W (Ta) and 51W (Tc). This MOSFET is utilized in various industries including industrial power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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