FQD10N20TF
MOSFET N-CH 200V 7.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD10N20TF is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) of 7.6 A at 25°C (Tc), this component offers robust switching capabilities. Its low on-resistance, specified as 360 mOhm maximum at 3.8 A and 10 V Vgs, minimizes conduction losses. The TO-252AA (DPAK) surface mount package provides efficient thermal management with a maximum power dissipation of 51 W (Tc). Key parameters include a Gate Charge (Qg) of 18 nC at 10 V and an input capacitance (Ciss) of 670 pF at 25 V. This MOSFET is suitable for use in power supply units, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |