FQD10N20LTM
MOSFET N-CH 200V 7.6A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQD10N20LTM is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 7.6A at 25°C (Tc). Optimized for surface mounting, it is supplied in a TO-252-3, DPAK package, facilitating efficient thermal management with a maximum power dissipation of 51W (Tc). The device exhibits a low on-resistance (Rds On) of 360mOhm at 3.8A and 10V gate drive, with a typical gate charge (Qg) of 17 nC at 5V. Key operating parameters include a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. This MOSFET is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |