FQD10N20LTF
MOSFET N-CH 200V 7.6A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQD10N20LTF is a QFET® series N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 7.6A at 25°C (Tc). The Rds On is specified at a maximum of 360mOhm at 3.8A and 10V Vgs. With a gate charge (Qg) of 17 nC at 5V and input capacitance (Ciss) of 830 pF at 25V, it offers robust performance characteristics. The MOSFET is housed in a TO-252-3, DPAK (SC-63) surface mount package, suitable for automated assembly. Maximum power dissipation is 2.5W (Ta) and 51W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component finds application in power supplies, motor control, and lighting systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |