FQD10N20CTM
MOSFET N-CH 200V 7.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD10N20CTM is an N-Channel Power MOSFET from the QFET® series, designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 7.8A at 25°C, with a maximum power dissipation of 50W (Tc). The Rds On is specified at a maximum of 360mOhm at 3.9A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 26 nC (max) at 10V and Input Capacitance (Ciss) of 510 pF (max) at 25V. The MOSFET utilizes Metal Oxide technology and is housed in a TO-252AA (DPAK) surface mount package. It is supplied in Tape & Reel packaging. This component is suitable for use in industrial automation, power supplies, and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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