FQD10N20CTF
MOSFET N-CH 200V 7.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD10N20CTF is an N-Channel Power MOSFET from the QFET® series. This component features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 7.8 A at 25°C (Tc). With a maximum power dissipation of 50 W (Tc) and a low on-resistance (Rds On) of 360 mOhm at 3.9 A and 10 V, it is suitable for demanding applications. The device utilizes a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 26 nC at 10 V, input capacitance (Ciss) of 510 pF at 25 V, and a threshold voltage (Vgs(th)) of 4V at 250µA. Operating temperature ranges from -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is commonly found in power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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