FQB9N50CTM
MOSFET N-CH 500V 9A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB9N50CTM is a 500V N-Channel Power MOSFET designed for efficient switching in demanding applications. This component offers a continuous drain current of 9A (Tc) and a maximum power dissipation of 135W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 500V and a maximum on-resistance (Rds On) of 800mOhm at 4.5A and 10V gate drive. The device features a gate charge (Qg) of 35 nC (Max) at 10V and input capacitance (Ciss) of 1030 pF (Max) at 25V. Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount package, this MOSFET is suitable for applications in power supplies, motor control, and lighting. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V |
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