FQB9N08LTM
MOSFET N-CH 80V 9.3A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® series N-Channel MOSFET, part number FQB9N08LTM, offers 80 V drain-source breakdown voltage and 9.3 A continuous drain current at 25°C (Tc). This device features a low on-resistance of 210 mOhm maximum at 4.65 A and 10 V Vgs. With a gate charge of 6.1 nC maximum at 5 V Vgs and input capacitance of 280 pF maximum at 25 V Vds, it is suitable for efficient switching applications. The TO-263 (D2PAK) surface mount package provides thermal dissipation up to 40 W (Tc) and 3.75 W (Ta). This component is utilized in industrial, automotive, and power supply applications. It operates across a temperature range of -55°C to 175°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 4.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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