FQB8N60CTM
MOSFET N-CH 600V 7.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB8N60CTM is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 7.5A at 25°C (Tc). The Rds(on) is specified at a maximum of 1.2 Ohm at 3.75A and 10V Vgs. With a gate charge (Qg) of 36 nC at 10V and maximum input capacitance (Ciss) of 1255 pF at 25V, it offers efficient switching characteristics. The device is packaged in a TO-263 (D2PAK) surface-mount package, providing robust thermal performance with a maximum power dissipation of 147W (Tc). This MOSFET is suitable for use in power supply units, lighting, and motor control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 25 V |
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