FQB7P20TM-F085PC
MOSFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB7P20TM-F085PC is a P-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 7.3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 690mOhm at 3.65A and 10V Vgs, it offers efficient power switching. The device has a maximum Gate Charge (Qg) of 25 nC at 10V and an Input Capacitance (Ciss) of 770 pF at 25V. Power dissipation is rated at 3.13W (Ta) and 90W (Tc). Packaged in a TO-263 (D2PAK) surface-mount configuration, the FQB7P20TM-F085PC operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply circuits, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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