FQB7P20TM-F085P
MOSFET P-CH 200V 7.3A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB7P20TM-F085P is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 200 V and a continuous drain current (Id) of 7.3 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 690 mOhm at 3.65 A and 10 V gate drive, it offers efficient power switching. The device is packaged in a TO-263 (D2PAK) surface mount configuration, suitable for high-density board designs. Key parameters include a gate charge (Qg) of 25 nC at 10 V and an input capacitance (Ciss) of 770 pF at 25 V. The maximum power dissipation is rated at 3.13 W (Ta) and 90 W (Tc). This MOSFET operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging. It finds application in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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