FQB7P20TM
MOSFET P-CH 200V 7.3A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® P-Channel MOSFET, part number FQB7P20TM, offers a 200V drain-source breakdown voltage with a continuous drain current of 7.3A at 25°C (Tc). This surface mount device, packaged in a TO-263 (D2PAK) configuration, features a maximum on-resistance of 690mOhm at 3.65A and 10V Vgs. Key parameters include a gate charge of 25 nC and input capacitance of 770 pF at 25V. Power dissipation is rated at 3.13W (Ta) and 90W (Tc). Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in power switching, motor control, and power supplies across industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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