FQB7N60TM
MOSFET N-CH 600V 7.4A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB7N60TM is a QFET® series N-Channel Power MOSFET designed for high-performance switching applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 7.4A at 25°C (Tc). The Rds(On) is specified at a maximum of 1 Ohm at 3.7A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 38 nC at 10V and an Input Capacitance (Ciss) of 1430 pF at 25V. The MOSFET supports a maximum Gate-to-Source Voltage (Vgs) of ±30V and a Thermal Resistance (Rth) of 3.13W (Ta) and 142W (Tc) for power dissipation. Packaged in a TO-263 (D2PAK) surface-mount configuration, the FQB7N60TM is suitable for use in power supplies, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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