FQB7N20TM
MOSFET N-CH 200V 6.6A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQB7N20TM is an N-Channel Power MOSFET from the QFET® series, designed for demanding applications requiring high voltage and current handling. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 6.6A at 25°C (Tc). With a low Rds(On) of 690mOhm maximum at 3.3A and 10V Vgs, efficiency is maximized. The MOSFET offers a maximum gate charge (Qg) of 10 nC at 10V and an input capacitance (Ciss) of 400 pF at 25V. Power dissipation is rated at 3.13W (Ta) and 63W (Tc). Encased in a TO-263 (D2PAK) surface mount package, the FQB7N20TM is suitable for industrial, consumer electronics, and power supply applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
