FQB7N20LTM
MOSFET N-CH 200V 6.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQB7N20LTM is a N-Channel MOSFET designed for high-performance applications. This device features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 6.5A at 25°C (Tc). With a low on-resistance (Rds On) of 750mOhm at 3.25A and 10V, it minimizes conduction losses. The MOSFET utilizes Metal Oxide technology and is housed in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. Key parameters include gate charge (Qg) of 9 nC at 5V and input capacitance (Ciss) of 500 pF at 25V. It supports drive voltages from 5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 3.13W (Ta) and 63W (Tc). This component is commonly found in power supply units, motor control, and lighting control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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