FQB6N80TM
MOSFET N-CH 800V 5.8A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB6N80TM is an N-Channel MOSFET from the QFET® series, designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 5.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.95 Ohms at 2.9A and 10V Vgs, it offers efficient switching. The device is housed in a TO-263 (D2PAK) surface mount package, suitable for automated assembly. Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 1500 pF at 25V. Power dissipation is rated at 158W (Tc) and 3.13W (Ta). This MOSFET is often utilized in power factor correction (PFC), switch mode power supplies (SMPS), and general purpose power switching applications across various industrial and consumer electronics sectors. The FQB6N80TM is supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 158W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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