FQB6N60CTM
MOSFET N-CH 600V 5.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB6N60CTM is an N-Channel QFET® series MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain current (Id) of 5.5 A at 25°C, with a maximum power dissipation of 125 W. The on-resistance (Rds On) is a maximum of 2 Ohms at 2.75 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 20 nC and Input Capacitance (Ciss) of 810 pF at 25 V. The FQB6N60CTM is housed in a TO-263 (D2PAK) surface mount package, suitable for high-density designs. This component is commonly utilized in power supplies, lighting, and motor control applications across various industrial sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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