FQB5P20TM
MOSFET P-CH 200V 4.8A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB5P20TM is a P-Channel MOSFET designed for robust power switching applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 4.8A at 25°C (Tc). With a maximum Rds(on) of 1.4 Ohms at 2.4A and 10V gate drive, it offers efficient conduction. The device is housed in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. Key parameters include a Gate Charge (Qg) of 13nC (max) at 10V and Input Capacitance (Ciss) of 430pF (max) at 25V. Power dissipation is rated at 75W (Tc) and 3.13W (Ta). The operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in various industries including industrial automation, power supplies, and automotive electronics.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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